? 2003 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 200 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 200 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c88a i dm t c = 25 c, pulse width limited by t jm 352 a i ar t c = 25 c88a e ar t c = 25 c50mj e as t c = 25 c 2.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 20 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 500 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c m d mounting torque to-247 1.13/10 nm/lb.in. to-264 0.9/6 nm/lb.in. weight to-247, plus 247 6 g to-264 10 g hiperfet tm power mosfets n-channel enhancement mode avalanche rated, high dv/dt, low q g features z low gate charge z international standard packages z epoxy meet ul 94 v-0, flammability classification z low r ds (on) hdmos tm process z rugged polysilicon gate cell structure z avalanche energy and current rated z fast intrinsic rectifier advantages z easy to mount z space savings z high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 ua 200 v v gs(th) v ds = v gs , i d = 4 ma 2.0 4.0 v i gss v gs = 20 v dc, v ds = 0 100 na i dss v ds = v dss t j = 25 c25 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 30 m ? pulse test, t 300 s, duty cycle d 2 % ds98969a(03/03) to-247 ad (ixfh) ixfh 88n20q ixfk 88n20q ixfx 88n20q v dss = 200 v i d25 = 88 a r ds(on) = 30 m ? ? ? ? ? t rr 200 ns preliminary data sheet g = gate s = source tab = drain to-264 aa (ixfk) s g d d (tab) plus 247 tm (ixfx) d (tab) g d d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 , pulse test 40 55 s c iss 4150 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1100 pf c rss 340 pf t d(on) 18 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 20 ns t d(off) r g = 2.0 ? (external), 61 ns t f 15 ns q g(on) 146 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 30 nc q gd 60 nc r thjc 0.25 k/w r thck to-247 0.25 k/w to-264, plus 247 0.15 k/w dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 to-247 ad (ixfh) outline source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 88 a i sm repetitive; pulse width limited by t jm 352 a v sd i f = i s , v gs = 0 v, 1.3 v pulse test, t 300 s, duty cycle d 2 % t rr 200 ns q rm 0.8 c i rm 8 a i f = 25a -di/dt = 100 a/ s, v r = 100 v ixfh 88n20q ixfk 88n20q ixfx 88n20q to-264 aa (ixfk) outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. plus 247 (ixfx) outline
? 2003 ixys all rights reserved fig. 2. extended output characteristics @ 25 deg. c 0 30 60 90 12 0 15 0 18 0 024 681012 v ds - volts i d - amperes v gs = 1 0v 9v 8v 5v 6v 7v fig. 3. output characteristics @ 125 deg. c 0 15 30 45 60 75 90 0 1234567 v ds - volts i d - amperes v gs = 1 0v 9v 8v 7v 5v 6v fig. 1. output characteristics @ 25 deg. c 0 15 30 45 60 75 90 0 0.5 1 1.5 2 2.5 3 3.5 v ds - volts i d - amperes v gs = 1 0v 9v 8v 7v 5v 6v fig. 4. r ds(on) normalized to i d25 value vs. junction temperature 0.6 1 1. 4 1. 8 2.2 2.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalize d i d = 88a i d = 44a v gs = 1 0v fig. 6. drain current vs. case temperature 0 20 40 60 80 10 0 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) normalized to i d25 value vs. i d 0.7 1 1. 3 1. 6 1. 9 2.2 2.5 2.8 3.1 0 306090120150180210 i d - amperes r ds(on) - normalize d t j = 1 25oc t j = 25oc v gs = 1 0v ixfh 88n20q ixfk 88n20q ixfx 88n20q
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixfh 88n20q ixfk 88n20q ixfx 88n20q fig. 11. capacitance 10 0 10 0 0 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - p f c iss c oss c rss f = 1 m hz fig. 10. gate charge 0 2 4 6 8 10 0306090120150 q g - nanocoulombs v gs - volts v ds = 1 00v i d = 44a i g = 1 0ma fig. 7. input admittance 0 20 40 60 80 10 0 33.544.555.56 v gs - volts i d - amperes t j = -40oc 25oc 1 25oc fig. 12. maximum transient thermal resistance 0.01 0.1 1 1 10 100 1000 pulse width - milliseconds r (th)jc - (oc/w) fig. 8. transconductance 0 20 40 60 80 10 0 0 30 60 90 120 150 180 i d - amperes g fs - siemens t j = -40oc 25oc 1 25oc fig. 9. source current vs. source-to-drain voltage 0 40 80 12 0 16 0 200 0.4 0.55 0.7 0.85 1 1.15 1.3 v sd - volts i s - amperes t j = 1 25oc t j = 25oc
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